HAT2068R Datasheet, PDF (3/7 Pages) Renesas Technology Corp – Silicon N Channel Power MOS FET Power Switching

HAT2068R
Main Characteristics
Power vs. Temperature Derating
4.0
Test Condition:
When using the glass epoxy board
(FR4 40 × 40 × 1.6 mm), PW ≤ 10 s
3.0
2.0
1.0
0
0
50
100
150
200
Ambient Temperature Ta (°C)
Typical Output Characteristics
50
10 V
4.5 V
40
4V
Pulse Test
3.5 V
30
20
V_GS = 3 V
10
0
0
2
4
6
8
10
Drain to Source Voltage V_DS (V)
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
0.20
Pulse Test
0.16
0.12
0.08
I_D = 10 A
0.04
5A
2A
0
0
4
8
12 16
20
Gate to Source Voltage V_GS (V)
Rev.5.00 Sep 07, 2005 page 3 of 6
Maximum Safe Operation Area
500
100
10
1
10
OthpiseararDetiCoanOisipneratiPonW(P=W101_≤^{m1m10s00sNoµ}_ste^s₎
µ_s
4
limited by R_{DS (on)}
0.1
Ta = 25°C
1 shot Pulse
0.01
0.1 0.3 1 3 10 30 100
Drain to Source Voltage V_DS (V)
Note 4:
When using the glass epoxy board
(FR4 40 × 40 × 1.6 mm)
Typical Transfer Characteristics
50
V_DS = 10 V
Pulse Test
40
30
20
Tc = 75°C
10
25°C
–25°C
0
0
1
2
3
4
5
Gate to Source Voltage V_GS (V)
Static Drain to Source on State Resistance
vs. Drain Current
100
Pulse Test
50
20
V_GS = 4.5 V
10
5
10 V
2
1
0.1 0.2 0.5 1 2 5 10 20 50 100
Drain Current I_D (A)