HAT1048R Datasheet, PDF (3/5 Pages) Renesas Technology Corp – Silicon P Channel Power MOS FET Power Switching

Electrical Characteristics (Ta = 25°C)
Item
Symbol
Drain to source breakdown
voltage
V_(BR)DSS
Gate to source breakdown voltage V_(BR)GSS
Gate to source leak current
I _GSS
Zero gate voltege drain current I_DSS
Gate to source cutoff voltage
V_GS(off)
Static drain to source on state
R_DS(on)
resistance
R_DS(on)
Forward transfer admittance
|y_fs|
Input capacitance
Ciss
Output capacitance
Coss
Reverse transfer capacitance
Crss
Total gate charge
Qg
Gate to source charge
Qgs
Gate to drain charge
Qgd
Turn-on delay time
t _d(on)
Rise time
t_r
Turn-off delay time
t _d(off)
Fall time
t_f
Body–drain diode forward voltage V_DF
Body–drain diode reverse
t _rr
recovery time
Note: 3. Pulse test
Min
-30
± 20
—
—
-1.0
—
—
(18)
—
—
—
—
—
—
—
—
—
—
—
—
Typ
Max Unit
—
—
V
—
—
V
—
± 10 µA
—
-1
µA
—
-2.5
V
(6.0) (7.0) mΩ
(9.5) (13.5) mΩ
(30)
—
S
(5700) —
pF
(1250) —
pF
(710) —
pF
(105) —
nc
(14)
—
nc
(20)
—
nc
(25)
—
ns
(45)
—
ns
(140) —
ns
(55)
—
ns
(-0.85) (-1.10) V
(50)
—
ns
HAT1048R
Test Conditions
I_D = -10 mA, V_GS = 0
I_G = ±100 µA, V_DS = 0
V_GS = ±16 V, V_DS = 0
V_DS = -30 V, V_GS = 0
V_DS = -10 V, I _D = -1 mA
I_D = -8 A, V_GS = -10 V ^Note3
I_D = -8 A, V_GS = -4.5V ^Note3
I_D = -8 A, V_DS = -10 V ^Note3
V_DS = -10 V
V_GS = 0
f = 1 MHz
V_DD = -10 V
V_GS = -10 V
I_D = -16 A
V_GS = -10 V, I_D = -8 A
V_DD ≅ 10 V
R_L = 1.25 Ω
R_g = 4.7 Ω
IF = -16 A, V_GS = 0 ^Note3
IF = -16 A, V_GS = 0 diF/ dt
= 50 A/ µs