H5N3004P Datasheet, PDF (3/10 Pages) Renesas Technology Corp – Silicon N Channel MOS FET High Speed Power Switching

H5N3004P
Electrical Characteristics
(Ta=25°C)
Item
Symbol Min
Drain to source breakdown voltage V_(BR)DSS 300
Zero gate voltage drain current
I_DSS
—
Gate to source leak current
I
—
GSS
Gate to source cutoff voltage
V
GS(off)
3.0
Forward transfer admittance
|y_fs|
15
Static drain to source on state
resistance
R_DS(on)
—
Input capacitance
Ciss
—
Output capacitance
Coss —
Reverse transfer capacitance
Crss —
Turn-on delay time
td(on) —
Rise time
tr
—
Turn-off delay time
td(off) —
Fall time
tf
—
Total gate charge
Qg
—
Gate to source charge
Qgs
—
Gate to drain charge
Qgd
—
Body-drain diode forward voltage
V
—
DF
Body-drain diode reverse recovery
trr
—
time
Body-drain diode reverse recovery Qrr
—
charge
Notes: 4. Pulse test
Typ Max Unit
•
—
V
•
1
µA
•
±0.1 µA
•
4.0
V
25
—
S
0.076 0. 093 Ω
3600 •
pF
400
•
pF
100
•
pF
50
•
ns
120 —
ns
180
•
ns
90
—
ns
110 —
nC
18
—
nC
55
—
nC
0.9 1.35 V
250 —
ns
2.3
—
µC
Test Conditions
I_D = 10 mA, V_GS = 0
V_DS = 300 V, V_GS = 0
V = ±30 V, V = 0
GS
DS
V = 10 V, I = 1 mA
DS
D
I = 12.5 A, V = 10 V^Note4
D
DS
I = 12.5 A, V = 10 V^Note4
D
GS
V = 25 V
DS
V =0
GS
f = 1 MHz
I_D= 12.5 A
R
L
=
12
Ω
V = 10 V
GS
Rg = 10 Ω
V_DD = 240 V
V_GS = 10 V
I_D = 25 A
I = 25 A, V = 0
F
GS
I = 25 A, V = 0
F
GS
diF/dt = 100 A/µs
Rev.0, Apr. 2002, page 3 of 3