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FY7BCH-02F Datasheet, PDF (3/3 Pages) Renesas Technology Corp – MITSUBISHI Nch POWER MOSFET HIGH-SPEED SWITCHING USE | |||
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PRELIMINARY NSootmicee:pTahriasmisetnroict laimfiintsalasrepescuibficjeacttiotno.change.
MITSUBISHI Nch POWER MOSFET
FY7BCH-02F
HIGH-SPEED SWITCHING USE
ELECTRICAL CHARACTERISTICS (Tch = 25°C)
Symbol
Parameter
Test conditions
V (BR) DSS
V (BR) GSS
IGSS
IDSS
VGS (th)
rDS (ON)
rDS (ON)
VDS (ON)
yfs
Ciss
Coss
Crss
td (on)
tr
td (off)
tf
VSD
Rth (ch-a)
trr
Drain-source breakdown voltage
Gate-source breakdown voltage
Gate-source leakage current
Drain-source leakage current
Gate-source threshold voltage
Drain-source on-state resistance
Drain-source on-state resistance
Drain-source on-state voltage
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Source-drain voltage
Thermal resistance
Reverse recovery time
ID = 1mA, VGS = 0V
IG = ±100µA, VDS = 0V
VGS = ±10V, VDS = 0V
VDS = 20V, VGS = 0V
ID = 1mA, VDS = 10V
ID = 7A, VGS = 4V
ID = 3.5A, VGS = 2.5V
ID = 7A, VGS = 4V
ID = 7A, VDS = 10V
VDS = 10V, VGS = 0V, f = 1MHz
VDD = 10V, ID = 3.5A, VGS = 4V, RGEN = RGS = 50â¦
IS = 1.5A, VGS = 0V
Channel to ambient
IS = 1.5A, dis/dt = â50A/µs
Limits
Unit
Min.
Typ.
Max.
20
â
â
V
±10
â
â
V
â
â
±10
µA
â
â
0.1
mA
0.5
0.9
1.5
V
â
17
21
mâ¦
â
21
30
mâ¦
â
0.119 0.147 V
â
20
â
S
â
1350
â
pF
â
â
â
pF
â
â
â
pF
â
â
â
ns
â
â
â
ns
â
â
â
ns
â
â
â
ns
â
0.85
1.1
V
â
â
78.1 °C/W
â
50
â
ns
Sep. 2000
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