FY7ACH-03A Datasheet, PDF (3/5 Pages) Mitsubishi Electric Semiconductor – HIGH-SPEED SWITCHING USE

MITSUBISHI Nch POWER MOSFET
FY7ACH-03A
HIGH-SPEED SWITCHING USE
ELECTRICAL CHARACTERISTICS (Tch = 25°C)
Symbol
Parameter
Test conditions
V (BR) DSS
IGSS
IDSS
VGS (th)
rDS (ON)
rDS (ON)
VDS (ON)
yfs
Ciss
Coss
Crss
td (on)
tr
td (off)
tf
VSD
Rth (ch-a)
trr
Drain-source breakdown voltage
Gate-source leakage current
Drain-source leakage current
Gate-source threshold voltage
Drain-source on-state resistance
Drain-source on-state resistance
Drain-source on-state voltage
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Source-drain voltage
Thermal resistance
Reverse recovery time
ID = 1mA, VGS = 0V
VGS = ±10V, VDS = 0V
VDS = 20V, VGS = 0V
ID = 1mA, VDS = 10V
ID = 7A, VGS = 4V
ID = 3A, VGS = 2.5V
ID = 7A, VGS = 4V
ID = 7A, VDS = 10V
VDS = 10V, VGS = 0V, f = 1MHz
VDD = 10V, ID = 3A, VGS = 4V, RGEN = RGS = 50Ω
IS = 1.7A, VGS = 0V
Channel to ambient
IS = 1.7A, dis/dt = –50A/µs
Limits
Min.
Typ. Max.
30
—
—
—
—
±0.1
—
—
0.1
0.5
0.9
1.3
—
20
26
—
28
38
—
0.14 0.18
—
18
—
—
1450
—
—
480
—
—
230
—
—
25
—
—
55
—
—
130
—
—
120
—
—
0.75
1.1
—
—
69.4
—
100
—
PERFORMANCE CURVES
POWER DISSIPATION DERATING CURVE
2.0
1.6
1.2
0.8
0.4
0
0
50
100
150
200
MAXIMUM SAFE OPERATING AREA
5
tw = 10µs
3
2
100µs
10¹
7
5
1ms
3
2
10⁰
10ms
7
5
3
100ms
2
10^{–1 TC = 25°C}
7 ^{Single Pulse}
DC
5
23
5 7 10⁰ 2 3
5 7 10¹ 2 3
5 7 10² 2
CASE TEMPERATURE TC (°C)
DRAIN-SOURCE VOLTAGE VDS (V)
Unit
V
µA
mA
V
mΩ
mΩ
V
S
pF
pF
pF
ns
ns
ns
ns
V
°C/W
ns
OUTPUT CHARACTERISTICS
(TYPICAL)
20
TC = 25°C
Pulse Test
16
VGS = 5V
4V
12
3V
2.5V
2V
8
1.5V
4
PD = 1.8W
0
0
0.2 0.4 0.6 0.8 1.0
DRAIN-SOURCE VOLTAGE VDS (V)
OUTPUT CHARACTERISTICS
(TYPICAL)
10
VGS = 5V
4V
TC = 25°C
Pulse Test
8
3V
2.5V
2V
1.5V
6
4
PD = 1.8W
2
0
0
0.1 0.2 0.3 0.4 0.5
DRAIN-SOURCE VOLTAGE VDS (V)
Sep. 2001