FY6BGH-02F Datasheet, PDF (3/3 Pages) Renesas Technology Corp – MITSUBISHI Nch POWER MOSFET HIGH-SPEED SWITCHING USE

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MITSUBISHI Nch POWER MOSFET
FY6BGH-02F
HIGH-SPEED SWITCHING USE
ELECTRICAL CHARACTERISTICS (Tch = 25°C)
Symbol
Parameter
Test conditions
V (BR) DSS
V (BR) GSS
IGSS
IDSS
VGS (th)
rDS (ON)
rDS (ON)
VDS (ON)
yfs
Ciss
Coss
Crss
td (on)
tr
td (off)
tf
VSD
Rth (ch-a)
trr
Drain-source breakdown voltage
Gate-source breakdown voltage
Gate-source leakage current
Drain-source leakage current
Gate-source threshold voltage
Drain-source on-state resistance
Drain-source on-state resistance
Drain-source on-state voltage
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Source-drain voltage
Thermal resistance
Reverse recovery time
ID = 1mA, VGS = 0V
IG = ±100µA, VDS = 0V
VGS = ±10V, VDS = 0V
VDS = 20V, VGS = 0V
ID = 1mA, VDS = 10V
ID = 6A, VGS = 4V
ID = 3A, VGS = 2.5V
ID = 6A, VGS = 4V
ID = 6A, VDS = 10V
VDS = 10V, VGS = 0V, f = 1MHz
VDD = 10V, ID = 3A, VGS = 4V, RGEN = RGS = 50Ω
IS = 1.3A, VGS = 0V
Channel to ambient
IS = 1.3A, dis/dt = –50A/µs
Limits
Unit
Min.
Typ.
Max.
20
—
—
V
±10
—
—
V
—
—
±10
µA
—
—
0.1
mA
0.5
0.9
1.5
V
—
20
25
mΩ
—
25
35
mΩ
—
0.120 0.150 V
—
15
—
S
—
1150
—
pF
—
—
—
pF
—
—
—
pF
—
—
—
ns
—
—
—
ns
—
—
—
ns
—
—
—
ns
—
0.85
1.1
V
—
—
89.3 °C/W
—
50
—
ns
Sep. 2000