FY3ACJ-03F Datasheet, PDF (3/3 Pages) Renesas Technology Corp – MITSUBISHI Nch POWER MOSFET

MITSUBISHI Nch POWER MOSFET
FY3ACJ-03F
HIGH-SPEED SWITCHING USE
ELECTRICAL CHARACTERISTICS (Tch = 25°C)
Symbol
Parameter
Test conditions
V (BR)DSS Drain-source breakdown voltage
V (BR)GSS Gate-source breakdown voltage
IGSS
Gate-source leakage current
IDSS
Drain-source leakage current
VGS (th) Gate-source threshold voltage
rDS (ON) Drain-source on-state resistance
rDS (ON) Drain-source on-state resistance
VDS (ON) Drain-source on-state voltage
Ciss
Input capacitance
Coss
Output capacitance
Crss
Reverse transfer capacitance
td (on)
Turn-on delay time
tr
Rise time
td (off)
Turn-off delay time
tf
Fall time
VSD
Source-drain voltage
Rth (ch-a) Thermal resistance
ID = 1mA, VGS = 0V
IG = ±100µA, VDS = 0V
VGS = ±20V, VDS = 0V
VDS = 30V, VGS = 0V
ID = 1mA, VDS = 10V
ID = 3A, VGS = 10V
ID = 1.5A, VGS = 4V
ID = 3A, VGS = 10V
VDS = 10V, VGS = 0V, f = 1MHz
VDD = 15V, ID = 1.5A, VGS = 10V, RGEN = RGS = 50Ω
IS = 1.4A, VGS = 0V
Channel to ambient
Limits
Unit
Min.
Typ. Max.
30
—
—
V
±20
—
—
V
—
—
±10
µA
—
—
0.1
mA
1.0
1.5
2.0
V
—
50
70
mΩ
—
80
120 mΩ
—
150
210
mV
—
260
—
pF
—
—
—
pF
—
—
—
pF
—
4.0
—
ns
—
6.5
—
ns
—
21.0
—
ns
—
8.5
—
ns
—
0.75 1.10
V
—
—
83.3 °C/W
Sep. 2001