FY14AAJ-03F Datasheet, PDF (3/3 Pages) Renesas Technology Corp – MITSUBISHI Nch POWER MOSFET

ELECTRICAL CHARACTERISTICS (Tch = 25°C)
Symbol
Parameter
Test conditions
V (BR)DSS Drain-source breakdown voltage
V (BR)GSS Gate-source breakdown voltage
IDSS
Drain-source leakage current
IGSS
Gate-source leakage current
VGS (th) Gate-source threshold voltage
rDS (ON) Drain-source on-state resistance
rDS (ON) Drain-source on-state resistance
rDS (ON) Drain-source on-state resistance
VDS (ON) Drain-source on-state voltage
| yfs |
Forward transfer admittance
Ciss
Input capacitance
Coss
Output capacitance
Crss
Reverse transfer capacitance
td (on)
Turn-on delay time
tr
Rise time
td (off)
Turn-off delay time
tf
Fall time
Qg
Total gate charge
Qgs
Gate-source charge
Qgd
Gate-drain charge
VSD
Source-drain voltage
Rth (ch-a) Thermal resistance
trr
Reverse recovery time
ID = 1mA, VGS = 0V
IG = ±100µA, VGS = 0V
VDS = 30V, VGS = 0V
VGS = ±20V, VDS = 0V
ID = 1mA, VDS = 10V
ID = 14A, VGS = 10V
ID = 7A, VGS = 4.5V
ID = 7A, VGS = 4V
ID = 14A, VGS = 10V
ID = 14A, VDS = 10V
VDS = 10V, VGS = 0V, f = 1MHz
VDD = 15V, ID = 7A, VGS = 5V, RG = 5Ω
VDD = 15V, VGS = 10V, ID = 14A
IS = 2.1A, VGS = 0V
Channel to air
IS = 2.1A, dis/dt = –50A/µs
MITSUBISHI Nch POWER MOSFET
FY14AAJ-03F
HIGH-SPEED SWITCHING USE
Limits
Unit
Min.
Typ. Max.
30
—
—
V
±20
—
—
V
—
—
0.1
mA
—
—
±10
µA
1.0
1.5
2.0
V
—
6.5
8.1
mΩ
—
8.8
12.0 mΩ
—
10.0 14.0 mΩ
—
0.091 0.113
V
—
30
—
S
—
2600
—
pF
—
750
—
pF
—
350
—
pF
—
22
—
ns
—
22
—
ns
—
60
—
ns
—
22
—
ns
—
53
—
nC
—
6
—
nC
—
15
—
nC
—
0.75 1.10
V
—
—
54.3 °C/W
—
40
—
ns
Sep. 2001