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FY12AAJ-03F Datasheet, PDF (3/3 Pages) Renesas Technology Corp – MITSUBISHI Nch POWER MOSFET HIGH-SPEED SWITCHING USE | |||
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MITSUBISHI Nch POWER MOSFET
FY12AAJ-03F
HIGH-SPEED SWITCHING USE
ELECTRICAL CHARACTERISTICS (Tch = 25°C)
Symbol
Parameter
Test conditions
V (BR)DSS Drain-source breakdown voltage
V (BR)GSS Gate-source breakdown voltage
IDSS
Drain-source leakage current
IGSS
Gate-source leakage current
VGS (th) Gate-source threshold voltage
rDS (ON) Drain-source on-state resistance
rDS (ON) Drain-source on-state resistance
rDS (ON) Drain-source on-state resistance
VDS (ON) Drain-source on-state voltage
| yfs |
Forward transfer admittance
Ciss
Input capacitance
Coss
Output capacitance
Crss
Reverse transfer capacitance
td (on)
Turn-on delay time
tr
Rise time
td (off)
Turn-off delay time
tf
Fall time
Qg
Total gate charge
Qgs
Gate-source charge
Qgd
Gate-drain charge
VSD
Source-drain voltage
Rth (ch-a) Thermal resistance
trr
Reverse recovery time
ID = 1mA, VGS = 0V
IG = ±100µA, VGS = 0V
VDS = 30V, VGS = 0V
VGS = ±20V, VDS = 0V
ID = 1mA, VDS = 10V
ID = 12A, VGS = 10V
ID = 6A, VGS = 4.5V
ID = 6A, VGS = 4V
ID = 12A, VGS = 10V
ID = 12A, VDS = 10V
VDS = 10V, VGS = 0V, f = 1MHz
VDD = 15V, ID = 6A, VGS = 10V, RG = 5â¦
VDD = 15V, VGS = 10V, ID = 12A
IS = 1.8A, VGS = 0V
Channel to air
IS = 1.8A, dis/dt = â50A/µs
Limits
Unit
Min.
Typ. Max.
30
â
â
V
±20
â
â
V
â
â
0.1
mA
â
â
±10
µA
1.0
1.5
2.0
V
â
9.0
11.5 mâ¦
â
12.5 17.5 mâ¦
â
14.5 20.0 mâ¦
â
0.108 0.138
V
â
25
â
S
â
1800
â
pF
â
500
â
pF
â
230
â
pF
â
18
â
ns
â
20
â
ns
â
50
â
ns
â
17
â
ns
â
35
â
nC
â
4
â
nC
â
10
â
nC
â
0.75 1.10
V
â
â
62.5 °C/W
â
45
â
ns
Sep. 2001
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