FX70KMJ-03 Datasheet, PDF (3/7 Pages) Mitsubishi Electric Semiconductor – HIGH-SPEED SWITCHING USE

FX70KMJ-03
Performance Curves
Power Dissipation Derating Curve
50
40
30
20
10
0
0
50
100
150
200
Case Temperature Tc (°C)
Output Characteristics (Typical)
–100
VGS =
–8V
–6V
–10V
–80
–5V
PD = 35W
–60
–40
–4V
–20
0
0
Tc = 25°C
Pulse Test
–3V
–0.4 –0.8 –1.2 –1.6 –2.0
Drain-Source Voltage V_DS (V)
On-State Voltage vs.
Gate-Source Voltage (Typical)
–2.0
Tc = 25°C
Pulse Test
–1.6
–1.2
ID = –100A
–0.8
–0.4
–70A
–35A
0
0
–2 –4 –6 –8 –10
Gate-Source Voltage V_GS (V)
Rev.2.00 Aug 07, 2006 page 3 of 6
Maximum Safe Operating Area
–10³
–7
–5
–3
–2
–10²
–7
–5
–3
tw = 100µs
1ms
–2
–10¹
–7
–5
–3
–2
Tc = 25°C
Single Pulse
10ms
100ms
–10⁰
–2
–3
–5 –7–10⁰
–2 –3
–5 –7–10¹
–2
DC
–3 –5–7–10²
–2
Drain-Source Voltage V_DS (V)
Output Characteristics (Typical)
–50
VGS = –10V
–40
–8V
–30
–6V –5V
PD = 35W
–4V
–20
–10
0
0
–3V
Tc = 25°C
Pulse Test
–0.2 –0.4 –0.6 –0.8 –1.0
Drain-Source Voltage V_DS (V)
On-State Resistance vs.
Drain Current (Typical)
40
Tc = 25°C
Pulse Test
32
24
VGS = –4V
16
–10V
8
0
–10⁰ –2 –3 –5 –7–10¹ –2 –3 –5–7–10² –2 –3 –5 –7–10³
Drain Current I_D (A)