FX50SMJ-2 Datasheet, PDF (3/7 Pages) Mitsubishi Electric Semiconductor – HIGH-SPEED SWITCHING USE

FX50SMJ-2
Performance Curves
Power Dissipation Derating Curve
250
200
150
100
50
0
0
50
100
150
200
Case Temperature Tc (°C)
Output Characteristics (Typical)
–100
–80
VGS =
–10V
–8V Tc = 25°C
–6V ^{Pulse Test}
–5V
–60
–4V
–40
–3V
–20
PD = 150W
0
0
–2 –4 –6 –8 –10
Drain-Source Voltage V_DS (V)
On-State Voltage vs.
Gate-Source Voltage (Typical)
–10
Tc = 25°C
Pulse Test
–8
–6
ID = –100A
–4
–2
–50A
–25A
0
0
–2 –4 –6 –8 –10
Gate-Source Voltage V_GS (V)
Rev.2.00 Aug 07, 2006 page 3 of 6
Maximum Safe Operating Area
–3
–2
–10²
–7
–5
–3
–2
tw =
10µs
100µs
–10¹
1ms
–7
–5
–3
–2
–10^{0 Tc = 25°C}
DC
–7 ^{Single Pulse}
–5
–3
–2 –3 –5–7–10⁰ –2 –3 –5–7–10¹ –2 –3 –5–7–10² –2
Drain-Source Voltage V_DS (V)
Output Characteristics (Typical)
–50
VGS =
–10V
–4V
–40
–8V
–6V
–5V
–30
PD = 150W
–20
–3V
–10
Tc = 25°C
Pulse Test
0
0 –1.0 –2.0 –3.0 –4.0 –5.0
Drain-Source Voltage V_DS (V)
On-State Resistance vs.
Drain Current (Typical)
100
80
60
VGS = –4V
40
–10V
20
0
–10⁰
–2 –3 –5 –7–10¹
Tc = 25°C
Pulse Test
–2 –3 –5 –7–10²
Drain Current I_D (A)