FS70UM-06 Datasheet, PDF (3/7 Pages) Mitsubishi Electric Semiconductor – HIGH-SPEED SWITCHING USE

FS70UM-06
Performance Curves
Power Dissipation Derating Curve
200
160
120
80
40
0
0
50
100
150
200
Case Temperature Tc (°C)
Output Characteristics (Typical)
VGS = 20V 10V
100
8V
6V
80
PD = 125W
60
Tc = 25°C
Pulse Test
5V
40
20
4V
0
0 0.4 0.8 1.2 1.6 2.0
Drain-Source Voltage V_DS (V)
On-State Voltage vs.
Gate-Source Voltage (Typical)
1.0
Tc = 25°C
Pulse Test
0.8
ID = 140A
0.6
100A
0.4
70A
0.2
30A
0
0
4
8
12 16 20
Gate-Source Voltage V_GS (V)
Rev.2.00 Aug 07, 2006 page 3 of 6
Maximum Safe Operating Area
3
2
tw = 10µs
10²
7
5
100µs
3
2
1ms
10¹
7
5
3
2
DC
10⁰
7 ^{Tc = 25°C}
5 Single Pulse
33 _{5 7100 2 3 5 7 101 2 3 5 7 102 2 3}
Drain-Source Voltage V_DS (V)
Output Characteristics (Typical)
VGS = 20V 10V
50
8V 6V
5V
40
30
Tc = 25°C
Pulse Test
4.5V
20
10
4V
0
0
0.2 0.4 0.6 0.8 1.0
Drain-Source Voltage V_DS (V)
On-State Resistance vs.
Drain Current (Typical)
10
Tc = 25°C
Pulse Test
8
VGS = 10V
6
20V
4
2
0
2 3 5 7 10⁰ 2 3 5 7 10¹ 2 3 5 7 10² 2
Drain Current I_D (A)