FS50VSJ-3 Datasheet, PDF (3/5 Pages) Mitsubishi Electric Semiconductor – HIGH-SPEED SWITCHING USE

MITSUBISHI Nch POWER MOSFET
FS50VSJ-3
HIGH-SPEED SWITCHING USE
ELECTRICAL CHARACTERISTICS (Tch = 25°C)
Symbol
Parameter
Test conditions
V (BR) DSS
IGSS
IDSS
VGS (th)
rDS (ON)
rDS (ON)
VDS (ON)
yfs
Ciss
Coss
Crss
td (on)
tr
td (off)
tf
VSD
Rth (ch-c)
trr
Drain-source breakdown voltage
Gate-source leakage current
Drain-source leakage current
Gate-source threshold voltage
Drain-source on-state resistance
Drain-source on-state resistance
Drain-source on-state voltage
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Source-drain voltage
Thermal resistance
Reverse recovery time
ID = 1mA, VGS = 0V
VGS = ±20V, VDS = 0V
VDS = 150V, VGS = 0V
ID = 1mA, VDS = 10V
ID = 25A, VGS = 10V
ID = 25A, VGS = 4V
ID = 25A, VGS = 10V
ID = 25A, VDS = 10V
VDS = 10V, VGS = 0V, f = 1MHz
VDD = 80V, ID = 25A, VGS = 10V, RGEN = RGS = 50Ω
IS = 25A, VGS = 0V
Channel to case
IS = 50A, dis/dt = –100A/µs
Limits
Min.
Typ. Max.
150
—
—
—
—
±0.1
—
—
0.1
1.0
1.5
2.0
—
23
30
—
24
32
—
0.58 0.75
—
62
—
—
8200
—
—
870
—
—
440
—
—
54
—
—
110
—
—
850
—
—
340
—
—
1.0
1.5
—
—
1.00
—
125
—
PERFORMANCE CURVES
POWER DISSIPATION DERATING CURVE
200
160
120
80
40
0
0
50
100
150
200
MAXIMUM SAFE OPERATING AREA
3
2
10²
tw = 10ms
7
5
3
2
100ms
10¹
7
1ms
5
3
10ms
2
10⁰
7
5
TC = 25°C
Single Pulse
3
10⁰ 2 3 5 7 10¹ 2 3
DC
5 7 10² 2 3
5 7 10³
CASE TEMPERATURE TC (°C)
DRAIN-SOURCE VOLTAGE VDS (V)
Unit
V
µA
mA
V
mΩ
mΩ
V
S
pF
pF
pF
ns
ns
ns
ns
V
°C/W
ns
OUTPUT CHARACTERISTICS
(TYPICAL)
100
VGS = 10V 5V
4V
TC = 25°C
Pulse Test
80
OUTPUT CHARACTERISTICS
(TYPICAL)
50
VGS = 10V 5V
4V
3V
40
60
3V
40
PD = 125W
20
0
0
1.0 2.0 3.0 4.0 5.0
DRAIN-SOURCE VOLTAGE VDS (V)
30
20
2.5V
10
TC = 25°C
Pulse Test
0
0 0.4 0.8 1.2 1.6 2.0
DRAIN-SOURCE VOLTAGE VDS (V)
Sep. 2000