FS30VSJ-03 Datasheet, PDF (3/5 Pages) Mitsubishi Electric Semiconductor – HIGH-SPEED SWITCHING USE

MITSUBISHI Nch POWER MOSFET
FS30VSJ-03
HIGH-SPEED SWITCHING USE
ELECTRICAL CHARACTERISTICS (Tch = 25°C)
Symbol
Parameter
Test conditions
V (BR) DSS
IGSS
IDSS
VGS (th)
rDS (ON)
rDS (ON)
VDS (ON)
yfs
Ciss
Coss
Crss
td (on)
tr
td (off)
tf
VSD
Rth (ch-c)
trr
Drain-source breakdown voltage
Gate-source leakage current
Drain-source leakage current
Gate-source threshold voltage
Drain-source on-state resistance
Drain-source on-state resistance
Drain-source on-state voltage
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Source-drain voltage
Thermal resistance
Reverse recovery time
ID = 1mA, VGS = 0V
VGS = ±20V, VDS = 0V
VDS = 30V, VGS = 0V
ID = 1mA, VDS = 10V
ID = 15A, VGS = 10V
ID = 15A, VGS = 4V
ID = 15A, VGS = 10V
ID = 15A, VDS = 5V
VDS = 10V, VGS = 0V, f = 1MHz
VDD = 15V, ID = 15A, VGS = 10V, RGEN = RGS = 50Ω
IS = 15A, VGS = 0V
Channel to case
IS = 15A, dis/dt = –50A/µs
Limits
Min.
Typ. Max.
30
—
—
—
—
±0.1
—
—
0.1
1.0
1.5
2.0
—
29
38
—
44
73
—
0.435 0.57
—
15
—
—
800
—
—
250
—
—
110
—
—
14
—
—
55
—
—
65
—
—
60
—
—
1.0
1.5
—
—
4.17
—
45
—
PERFORMANCE CURVES
POWER DISSIPATION DERATING CURVE
50
40
30
20
10
0
0
50
100
150
200
MAXIMUM SAFE OPERATING AREA
2
10²
7
5
3
tw = 10ms
2
10¹
7
5
3
2
TC = 25°C
Single Pulse
10⁰
7
5
100ms
1ms
10ms
DC
3
2
2 3 5 7 10⁰ 2 3 5 7 10¹ 2 3 5 7 10² 2
CASE TEMPERATURE TC (°C)
DRAIN-SOURCE VOLTAGE VDS (V)
Unit
V
µA
mA
V
mΩ
mΩ
V
S
pF
pF
pF
ns
ns
ns
ns
V
°C/W
ns
OUTPUT CHARACTERISTICS
(TYPICAL)
50
6V
Tc = 25°C
Pulse Test
40
VGS = 10V
8V
4V
OUTPUT CHARACTERISTICS
(TYPICAL)
20 ^{VGS = 10V}
8V
6V
16
4V
3V
PD = 30W
30
12
2.5V
20
3V
8
10
PD = 30W
2V
0
0
1.0 2.0 3.0 4.0 5.0
DRAIN-SOURCE VOLTAGE VDS (V)
2V
4
Tc = 25°C
Pulse Test
0
0
0.4 0.8 1.2 1.6 2.0
DRAIN-SOURCE VOLTAGE VDS (V)
Feb.1999