FS30ASJ-2 Datasheet, PDF (3/7 Pages) Mitsubishi Electric Semiconductor – HIGH-SPEED SWITCHING USE

FS30ASJ-2
Performance Curves
Power Dissipation Derating Curve
50
40
30
20
10
0
0
50
100
150
200
Case Temperature Tc (°C)
Output Characteristics (Typical)
50
VGS = 10V
6V
40
5V
4V
30
Tc = 25°C
Pulse Test
20
3V
10
PD = 35W
0
0 1.0 2.0 3.0 4.0 5.0
Drain-Source Voltage V_DS (V)
On-State Voltage vs.
Gate-Source Voltage (Typical)
5.0
ID = 50A
4.0
3.0
30A
2.0
1.0
Tc = 25°C
10A
Pulse Test
0
0
2
4
6
8
10
Gate-Source Voltage V_GS (V)
Rev.2.00 Aug 07, 2006 page 3 of 6
Maximum Safe Operating Area
3
2
10²
7
5
3
tw
=
100_µs
10_µs
2
10¹
7
DC
5
3
2
10⁰
7 ^{Tc = 25°C}
5 Single Pulse
3
3
5 7 10⁰ 2 3
5 7 10¹ 2 3
5 7 10² 2 3
Drain-Source Voltage V_DS (V)
Output Characteristics (Typical)
20
Tc = 25°C
Pulse Test
16 _{VGS = 10V}
5V
4V
12
PD = 35W
3V
8
2.5V
4
0
0 0.4 0.8 1.2 1.6 2.0
Drain-Source Voltage V_DS (V)
On-State Resistance vs.
Drain Current (Typical)
100
Tc = 25°C
Pulse Test
80
VGS = 4V
10V
60
40
20
0
3 5 7 10⁰ 2 3 5 7 10¹ 2 3 5 7 10² 2 3
Drain Current I_D (A)