FS10ASJ-2 Datasheet, PDF (3/7 Pages) Mitsubishi Electric Semiconductor – HIGH-SPEED SWITCHING USE

FS10ASJ-2
Performance Curves
Power Dissipation Derating Curve
50
40
30
20
10
0
0
50
100
150
200
Case Temperature Tc (°C)
Output Characteristics (Typical)
VGS = 10V 6V 5V
20
4V
16 ^{Tc = 25°C}
Pulse Test
12
3V
8
PD = 30W
4
0
0 1.0 2.0 3.0 4.0 5.0
Drain-Source Voltage V_DS (V)
On-State Voltage vs.
Gate-Source Voltage (Typical)
5.0
Tc = 25°C
Pulse Test
4.0
3.0
ID = 15A
2.0
10A
1.0
5A
0
0
2
4
6
8
10
Gate-Source Voltage V_GS (V)
Rev.2.00 Aug 07, 2006 page 3 of 6
Maximum Safe Operating Area
5
3
2
10¹
7
5
3
2
10⁰
7
5
3
2
Tc = 25°C
10^–1 Single Pulse
7
5
2 3 5 7 10⁰ 2 3
5 7 10¹ 2 3
5 7 10² 2
Drain-Source Voltage V_DS (V)
Output Characteristics (Typical)
10
Tc = 25°C
Pulse Test
8
VGS = 10V 6V 5V
4V
3V
6
4
2.5V
2
2V
0
0
0.4 0.8 1.2 1.6 2.0
Drain-Source Voltage V_DS (V)
On-State Resistance vs.
Drain Current (Typical)
0.5
Tc = 25°C
Pulse Test
0.4
0.3
VGS = 4V
0.2
10V
0.1
0
10^–1 2 3 5 7 10⁰ 2 3 5 7 10¹ 2 3 5 7 10²
Drain Current I_D (A)