CY25BAH-8F Datasheet, PDF (3/5 Pages) Renesas Technology Corp – Nch IGBT for Strobe Flasher

CY25BAH-8F
Application Example
VCM
Xe Tube
CM ₊
–
4
3
2
1
VGG
Drive Circuit
RG(on)
10 Ω
5
6
7
8
RG(off)
68 Ω
GE
Ω
Control Signal
VCM
ICP
CM
VGE
Recommended Operation Maximum Operation
Conditions
Conditions
330 V
350 V
130 A
150 A
300 µF
400 µF
2.85 V
2.5 V
Precautions on Usage
1. IGBT has MOS structure and its gate is insulated by thin silicon oxide. So please handle carefully to protect the
device from electrostatic charge.
2. Gate drive voltage during on-period must be applied to satisfy the rating of maximum pulse collector current. And
peak reverse gate current during turn-off must become less than 25 mA. (In general, when R_{G (off)} = 68Ω, it is
satisfied.)
3. The ground of the drive signal must be connected to pin 7 only. If the emitter terminal pins 5 and 6 in which a large
currents flow are given to the device as the drive signal emitter, the device may be damaged due to large currents
since the specified gate voltage is not applied to the IGBT within the device.
4. The operation life should be endured 5,000 shots under the charge current (I_Xe ≤ 150 A : full luminescence
condition) of main capacitor (C_M = 400 µF) which can endure repeated discharge of 5,000 times. Repetition period
under full luminescence condition is over 3 seconds.
5. Total operation hours applied to the gate-emitter voltage must be within 5,000 hours when V_GE is driven at 4 V..
Order Code
Lead form
Standard packing Quantity
Standard order code
Surface-mounted type Taping
3000 Type name – T +Direction (1 or 2) +3
Note: Please confirm the specification about the shipping in detail.
Standard order
code example
CY25BAH-8F-T13
Rev.3.00, Nov 29, 2005 page 3 of 4