CY20AAJ-8F Datasheet, PDF (3/5 Pages) Powerex Power Semiconductors – Nch IGBT for STROBE FLASHER

CY20AAJ-8F
Application Example
IXe
Vtrig
CM
+
–
VCM
Trigger Signal Vtrig
RG
VCE
30Ω
VG
IGBT
IGBT
V_G
Gate Voltage
V_CM
I_CP
C_M
V_GE
Recommended Operation
Conditions
330 V
120 A
330 µF
5V
Maximum Operation
Conditions
350 V
130 A
400 µF
—
Xe Tube Current IXe
Precautions on Usage
1. IGBT has MOS structure and its gate is insulated by thin silicon oxide. So please handle carefully to protect the
device from electrostatic charge.
2. Gate drive voltage during on-period must be applied to satisfy the rating of maximum pulse collector current. And
peak reverse gate current during turn-off must become less than 0.1 A. (In general, when R_{G (off)} = 30 Ω, it is
satisfied.)
3. The operation life should be endured 5,000 shots under the charge current (I_Xe ≤ 130 A : full luminescence
condition) of main capacitor (C_M = 400 µF) which can endure repeated discharge of 5,000 times. Repetition period
under full luminescence condition is over 3 seconds.
4. Total operation hours applied to the gate-emitter voltage must be within 5,000 hours.
Rev.1.00, Aug.20.2004, page 3 of 4