CT35SM-8 Datasheet, PDF (3/3 Pages) Mitsubishi Electric Semiconductor – STROBE FLASHER USE

MITSUBISHI INSULATED GATE BIPOLAR TRANSISTOR
CT35SM-8
STROBE FLASHER USE
PERFORMANCE CURVES
MAXIMUM PULSE COLLECTOR CURRENT
200
CM = 1000µF
160
120
TC =< 70°C
80
40
0
0
10 20 30 40 50
GATE-EMITTER VOLTAGE VGE (V)
Figure 1
MAXIMUM PULSE COLLECTOR CURRENT
2000
1600
1200
800
400 VCM = 350V
TC ^<= 70°C
VGE => 28V
0
140 160 180 200 220 240
PULSE COLLECTOR CURRENT ICP (A)
Figure 2
APPLICATION EXAMPLE
IXe
TRIGGER _Vtrig
SIGNAL
Vtrig
RG
VG
VCE
IGBT
CM
+
VCM
–
IGBT GATE VG
VOLTAGE
Xe TUBE ^Ixe
CURRENT
RECOMMEND CONDITION
VCM = 330V
IP = 180A
CM = 800µF
VGE = 28V
MAXIMUM CONDITION
360V
200A
1000µF
Notice 1. Gate drive voltage during on-period must be applied to satisfy the rating of maximum pulse collector current.
And reverse gate current during turn-off must be kept less than 1A.
(In general, it is satisfied if RG ≥ 30Ω)
Notice 2. IGBT has MOS structure and its gate is insulated by thin silicon oxide.
So please handle carefully not to suffer from electrostatic charge.
Notice 3. The operation life should be endured 5,000 shots under the charge current
(Ixe ≤ 200A : full luminescence condition) of main condenser (CM=1000µF).
Repetition period under full luminescence condition is over 3 seconds.
Notice 4. Total operation hours must be applied within 5,000 hours.
Feb.1999