CT25ASJ-8 Datasheet, PDF (3/3 Pages) Mitsubishi Electric Semiconductor – STROBE FLASHER USE

MITSUBISHI INSULATED GATE BIPOLAR TRANSISTOR
CT25ASJ-8
STROBE FLASHER USE
PERFORMANCE CURVES
MAXIMUM PULSE COLLECTOR CURRENT
160
CM = 400µF
120
80
TC ≤ 70°C
40
0
0
2
4
6
8
GATE-EMITTER VOLTAGE VGE (V)
Figure 1
APPLICATION EXAMPLE
IXe
20µH
TRIGGER _Vtrig
SIGNAL
Vtrig
RG
VG
VCE
IGBT
CM
+
VCM
–
IGBT GATE VG
VOLTAGE
Xe TUBE ^Ixe
CURRENT
RECOMMEND CONDITION
VCM = 330V
ICP = 130A
CM = 330µF
VGE = 5V
MAXIMUM CONDITION
350V
150A
400µF
Notice 1. Gate drive voltage during on-period must be applied to satisfy the rating of maximum pulse collector current.
And reverse gate current during turn-off must be kept less than 0.1A.
(In general, it is satisfied if RG ≥ 30Ω)
Notice 2. IGBT has MOS structure and its gate is insulated by thin silicon oxide.
So please handle carefully not to suffer from electrostatic charge.
Notice 3. The operation life should be endured 5,000 shots under the charge current
(Ixe ≤ 150A : full luminescence condition) of main condenser (CM=400µF).
Repetition period under full luminescence condition is over 3 seconds.
Notice 4. Total operation hours must be applied within 5,000 hours.
Feb.1999