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CR08AS-12A_15 Datasheet, PDF (3/8 Pages) Renesas Technology Corp – 600V - 0.8A - Thyristor Low Power Use
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CR08AS-12A
Performance Curves
Maximum On-State Characteristics
102
Ta = 25°C
101
100
10−1
0
1
2
3
4
5
On-State Voltage (V)
Gate Characteristics
102
101 VFGM = 6V
PGM = 0.5W
PG(AV) = 0.1W
100
VGT = 0.8V
IGT = 100μA
(Tj = 25°C)
10−1
VGD = 0.2V
IFGM = 0.3A
10−2
10−2
10−1
100
101
102
Gate Current (mA)
Gate Trigger Voltage vs.
Junction Temperature
1.0
Distribution
0.8
Typical Example
0.6
0.4
0.2
0
–40 –20 0 20 40 60 80 100 120
Junction Temperature (°C)
R07DS0489EJ0300 Rev.3.00
May 22, 2013
Preliminary
Rated Surge On-State Current
10
8
6
4
2
0
100
101
102
Conduction Time (Cycles at 60Hz)
Gate Trigger Current vs.
Junction Temperature
103
Typical Example
102
101
100
–40 0
40 80 120 160
Junction Temperature (°C)
Maximum Transient Thermal Impedance
Characteristics (Junction to ambient)
10310205×25×t01.701
102
103
Aluminum Board
102
101
100
10−3
10−2
10−1
100
Time (s)
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