2SK435 Datasheet, PDF (3/6 Pages) Hitachi Semiconductor – Silicon N-Channel Junction FET

2SK435
Maximum Channel Dissipation Curve
400
300
200
100
0
50
100
150 200
Ambient Temperature Ta (°C)
Typical Transfer Characteristics
20
V_DS = 5 V
16
12
8
4
0
−1.25 −1.0 −0.75 −0.5 −0.25 0
Gate to Source Voltage V_GS (V)
Forwaed Transfer Admittance
vs. Gate to Source Voltage
50
V_DS = 5 V
40
f = 1 kHz
30
20
10
0
−1.25 −1.0 −0.75 −0.5 −0.25 0
Gate to Source Voltage V_GS (V)
Typical Output Characteristics
20
V_GS ^{= 0V}
16
−0.1
12
−0.2
−0.3
8
−0.4
−0.5
4
−0.6
0
2
4
6
8
10
Drain to Source Voltage V_DS (V)
Forward Transfer Admittance
vs. Drain Current
100
V_DS = 5 V
f = 1 kHz
10
1.0
0.1
0.1
1.0
10
100
Drain Current I_D (mA)
1,000
100
Gate Cutoff Current
vs. Gate to Source Voltage
V_DS = 0
10
1.0
0.1
0
−10 −20 −30 −40 −50
Gate to Source Voltage V_GS (V)
Rev.2.00 Aug 10, 2005 page 3 of 5