2SK3212 Datasheet, PDF (3/8 Pages) Hitachi Semiconductor – Silicon N Channel MOS FET High Speed Power Switching

2SK3212
Main Characteristics
Power vs. Temperature Derating
40
30
20
10
0
50
100
150
200
Case Temperature T_C (°C)
Typical Output Characteristics
10
10 V
Pulse Test
8
6V
6
4V
3.5 V
4
3V
2
V_GS =2.5 V
0
2
4
6
8
10
Drain to Source Voltage V_DS (V)
Drain to Source Saturation Voltage
vs. Gate to Source Voltage
2.5
Pulse Test
2.0
1.5
1.0
I_D = 5 A
0.5
2A
1A
0
4
8
12 16 20
Gate to Source Voltage V_GS (V)
Rev.3.00 Sep 07, 2005 page 3 of 7
Maximum Safe Operation Area
100
50
20
10
5
2
1
0.5
PW
Oper^Da^Cti^Oo^pn^eri^an^{ti=on10(Tmc =s}
this area is
100
1 _ms
(1shot)
25_°C)
10
µ_s
µ_s
0.2 ^{limited by RDS(on)}
0.1 ^{Ta = 25°C}
1 2 5 10 20
50 100 200
Drain to Source Voltage V_DS (V)
Typical Transfer Characteristics
10
V_DS = 10 V
Pulse Test
8
6
4
Tc = 75°C
2
–25°C
25°C
0
1
2
3
4
5
Gate to Source Voltage V_GS (V)
Static Drain to Source on State
Resistance vs. Drain Current
500
Pulse Test
200
V_GS = 4 V
100
10 V
50
20
10
0.1 0.2 0.5 1 2 5 10 20 50
Drain Current I_D (A)