2SK1808 Datasheet, PDF (3/7 Pages) Hitachi Semiconductor – Silicon N-Channel MOS FET

2SK1808
Main Characteristics
Power vs. Temperature Derating
60
40
20
0
50
100
150
Case Temperature T_C (°C)
Typical Output Characteristics
5
10 V
4
6 V ^{Pulse Test}
5V
3
4.5 V
2
1
4V
V_GS = 3.5 V
0
10 20 30 40 50
Drain to Source Voltage V_DS (V)
Drain to Source Saturation Voltage
vs. Gate to Source Voltage
20
5A
16
Pulse Test
12
8
2A
4
I_D = 1 A
0
4
8
12
16 20
Gate to Source Voltage V_GS (V)
Rev.2.00 Sep 07, 2005 page 3 of 6
Maximum Safe Operation Area
100
30
10
3
1
OilnpimethritaiestdioabnreyaRis^{DS (on)}
0.3
0.1
10 _µs
1 _ms
0.03 Ta = 25°C
0.01
1 3 10 30 100 300 1000 3000 10000
Drain to Source Voltage V_DS (V)
Typical Transfer Characteristics
5
V_DS = 20 V
Pulse Test
4
3
2
75°C
T_C = 25°C
1
–25°C
0
2
4
6
8
10
Gate to Source Voltage V_GS (V)
Static Drain to Source on State
Resistance vs. Drain Current
50
Pulse Test
20
10
V_GS = 10 V
5
15 V
2
1
0.5
0.2
0.5 1 2
5 10 20
Drain Current I_D (A)