2SK1669 Datasheet, PDF (3/7 Pages) Hitachi Semiconductor – Silicon N-Channel MOS FET

2SK1669
Main Characteristics
Power vs. Temperature Derating
150
100
50
0
50
100
150
Case Temperature T_C (°C)
Typical Output Characteristics
50
10 V
8V
Pulse Test
40
6V
5V
30
20
4.5 V
10
V_GS = 4 V
0
4
8
12 16 20
Drain to Source Voltage V_DS (V)
Drain to Source Saturation Voltage
vs. Gate to Source Voltage
5
Pulse Test
4
3
2
I_D = 20 A
1
10 A
5A
0
4
8
12 16 20
Gate to Source Voltage V_GS (V)
Rev.2.00 Sep 07, 2005 page 3 of 6
Maximum Safe Operation Area
1,000
300
100
30
10
3
Oipselrimatiitoend
ibnythRis_D^aSr(eona)
PW
1
DC _{Opera=tio1n0(mT s}
1001_µ^0sµs
ms
(1 _Shot)
1
C _{= 25°C)}
0.3 ^{Ta = 25°C}
0.1
1 3 10 30 ₁₀₀ 300 1,000
Drain to Source Voltage V_DS (V)
Typical Transfer Characteristics
50
V_DS = 10 V
Pulse Test
40
30
20
10
T_C = 75°C
25°C
–25°C
0
2
4
6
8
10
Gate to Source Voltage V_GS (V)
Static Drain to Source on State
Resistance vs. Drain Current
0.5
Pulse Test
0.2
0.1
V_GS = 10 V, 15 V
0.05
0.02
0.01
0.005
1
2
5 10 20 50 100
Drain Current I_D (A)