2SK1667 Datasheet, PDF (3/7 Pages) Hitachi Semiconductor – Silicon N-Channel MOS FET

2SK1667
Main Characteristics
Power vs. Temperature Derating
80
60
40
20
0
50
100
150
200
Case Temperature Tc (°C)
Typical Output Characteristics
10
10 V
6V
8
5.5 V
Pulse Test
5V
6
4
4.5 V
2
V_GS = 4 V
0
1
4
8
12 16 20
Drain to Source Voltage V_DS (V)
Drain to Source Saturation Voltage
vs. Gate to Source Voltage
10
Pulse Test
8
6
I_D = 10 A
4
5A
2
2A
0
4
8
12 16
20
Gate to Source Voltage V_GS (V)
Rev.2.00 Sep 07, 2005 page 3 of 6
Maximum Safe Operation Area
100
Operation in this area
30
10
is limited by R_DS(on)
100
10
µ_s
µ_s
3
1
0.3
Ta = 2^D5^C°^OC^{pPerWati=on10(Tmcs=1(21m5ss°hCo)t)}
0.1
1 3 10 30 100 300 1000
Drain to Source Voltage V_DS (V)
Typical Transfer Characteristics
10
8 ^{VDS = 10 V}
Pulse Test
6
4
Tc = 75°C
25°C
2
– 25°C
0
2
4
6
8
10
Gate to Source Voltage V_GS (V)
Static Drain to Source on State Resistance
vs. Drain Current
5
Pulse Test
2
1
0.5
0.2
V_GS = 10 V
15 V
0.1
0.05
0.2
0.5 1 2
5 10 20
Drain Current I_D (A)