2SK1522-E1-E_15 Datasheet, PDF (3/7 Pages) Renesas Technology Corp – 500V - 50A - MOS FET High Speed Power Switching

2SK1522-E1-E
Main Characteristics
Maximum Safe Operation Area
1000
100
PW
10 _μs
= _{100 μs}
10
Operation in this
area is limited by
R_DS(on)
1
Tc = 25°C
1 shot
0.1
1
10
100
1000
Drain to Source Voltage V_DS (V)
Typical Transfer Characteristics
100
V_DS = 20 V
Pulse Test
80
60
40
20
Ta = 75°C
25°C
–25°C
0
0
2
4
6
8
10
Gate to Source Voltage V_GS (V)
Static Drain to Source on State Resistance
vs. Temperature (Typical)
0.5
V_GS = 10 V
Pulse Test
0.4
0.3
0.2
I_D = 50 A
0.1
10 A, 20 A
0
−25 0 25 50 75 100 125 150
Case Temperature Tc (°C)
R07DS1195EJ0200 Rev.2.00
Mar 26, 2014
Preliminary
Typical Output Characteristics
100
Ta = 25°C
Pulse Test
80
60
8V
10 V
6V
5.5 V
40
5V
20
4.5 V
V_GS = 4 V
0
0
4
8
12 16 20
Drain to Source Voltage V_DS (V)
Static Drain to Source on State
Resistance vs. Drain Current (Typical)
1
V_GS = 10 V
Ta = 25°C
Pulse Test
0.1
0.01
10
100
Drain Current I_D (A)
1000
1000
Body-Drain Diode Reverse
Recovery Time (Typical)
100
di/dt = 100 A/μs
V_GS = 0, Ta = 25°C
10
1
10
100
Reverse Drain Current I_DR (A)
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