2SK1338 Datasheet, PDF (3/7 Pages) Hitachi Semiconductor – Silicon N-Channel MOS FET

2SK1338
Main Characteristics
Power vs. Temperature Derating
60
40
20
0
50
100
150
Case Temperature T_C (°C)
Typical Output Characteristics
5
Pulse Test
10 V
4
6V
5.5 V
3
5.0 V
2
4.5 V
1
4.0 V
V_GS = 3.0 V
0
10 20 30 40 50
Drain to Source Voltage V_DS (V)
Drain to Source Saturation Voltage
vs. Gate to Source Voltage
50
Pulse Test
40
30
20
I_D = 3 A
2A
10
1A
0
4
8
12 16 20
Gate to Source Voltage V_GS (V)
Rev.2.00 Sep 07, 2005 page 3 of 6
Maximum Safe Operation Area
10
5
2
1
1
100
ms
µ_s
0.5
0.2
0.1 _{Ta = 25°C}
0.05
0.02
0.01
1 3 10 30 100 300 1,000
Drain to Source Voltage V_DS (V)
Typical Transfer Characteristics
5
V_DS = 20 V
Pulse Test
4
–25°C
3
T_C = 25°C
75°C
2
1
0
2
4
6
8
10
Gate to Source Voltage V_GS (V)
Static Drain to Source on State
Resistance vs. Drain Current
50
Pulse Test
20
10
V_GS = 10 V
5
15 V
2
1
0.5
0.05 0.1 0.2 0.5 1 2
5
Drain Current I_D (A)