2SK1316 Datasheet, PDF (3/8 Pages) Renesas Technology Corp – Silicon N Channel MOS FET

2SK1316(L), 2SK1316(S)
Main Characteristics
Power vs. Temperature Derating
80
60
40
20
0
50
100 150
200
Case Temperature T_C (°C)
Typical Output Characteristics
20
10 V
6V
Pulse Test
16
5.5 V
12
5.0 V
8
4.5 V
4
V_GS = 4 V
0
10 20 30 40 50
Drain to Source Voltage V_DS (V)
Drain to Source Saturation Voltage
vs. Gate to Source Voltage
10
Pulse Test
8
10 A
6
4
5A
2
I_D = 2 A
0
4
8
12 16 20
Gate to Source Voltage V_GS (V)
Rev.2.00 Sep 07, 2005 page 3 of 7
Maximum Safe Operation Area
50
20
10
5
2
1.0
0.5
Operation
in
DC
this
PW
Opera⁼_ti1on0
Area
10
1
100
ms
µ_s
(^m_Tc^s₌⁽¹_{25s°hCo)t)}
µ_s
is Limited by R_{DS (on)}
0.2
0.1
Ta = 25°C
0.05
1 3 10 30
100 300
1,000
Drain to Source Voltage V_DS (V)
Typical Transfer Characteristics
20
–25°C
Ta = 25°C
16
V_DS = 20 V
Pulse Test
75°C
12
8
4
0
2
4
6
8
10
Gate to Source Voltage V_GS (V)
Static Drain to Source on State
Resistance vs. Drain Current
10
5 Pulse Test
2
1.0
0.5
V_GS = 10 V
15 V
0.2
0.1
0.5 1.0 2
5 10 20 50
Drain Current I_D (A)