2SK1161 Datasheet, PDF (3/7 Pages) Hitachi Semiconductor – Silicon N-Channel MOS FET

2SK1161, 2SK1162
Main Characteristics
Power vs. Temperature Derating
120
80
40
0
50
100
150
Case Temperature T_C (°C)
Typical Output Characteristics
20
10 V _{7 V}
6V
16
Pulse Test
12
5V
8
4
V_GS = 4 V
0
10 20 30 40 50
Drain to Source Voltage V_DS (V)
Drain to Source Saturation Voltage
vs. Gate to Source Voltage
10
Pulse Test
8
10 A
6
4
5A
2
I_D = 2 A
0
4
8
12 16 20
Gate to Source Voltage V_GS (V)
Rev.2.00 Sep 07, 2005 page 3 of 6
Maximum Safe Operation Area
100
30
10
3
DC _{OpePrWatio=n1(0Tms1(1m1ssh0o0t)}^µs
1.0
C _{= 25°C)}
0.3 _{Ta = 25°C}
2SK1162
0.1
13
2SK1161
10 30 100 300
1,000
Drain to Source Voltage V_DS (V)
Typical Transfer Characteristics
20
–25°C
16
V_DS = 20 V
Pulse Test
T_C = 25°C
12
75°C
8
4
0
2
4
6
8
10
Gate to Source Voltage V_GS (V)
Static Drain to Source on State
Resistance vs. Drain Current
5
Pulse Test
2
V_GS = 10 V
1.0
0.5
15 V
0.2
0.1
0.05
0.5 1.0 2
5 10 20
50
Drain Current I_D (A)