2SK1070 Datasheet, PDF (3/5 Pages) Hitachi Semiconductor – Silicon N-Channel Junction FET

2SK1070
Forward Transfer Admittance
vs. Gate to Source Voltage
50
V_DS = 5 V
40
f = 1 kHz
30
20
10
0
–1.25 –1.0 –0.75 –0.5 –0.25 0
Gate to Source Voltage V_GS (V)
Input Capacitance vs.
Drain to Source Voltage
100
f = 1 MHz
50
V_GS = 0
20
10
5
2
1
0.1 0.2
0.5 1.0 2
5 10
Drain to Source Voltage V_DS (V)
12
10
8
6
4
2
0
10
Noise Figure vs.
Signal Source Resistance
V_DS = 5 V
I_D = 1 mA
f = 1 kHz
100
1k
10 k
Signal Source Resistance R_g (Ω)
100 k
1,000
100
Gate Cutoff Current
vs. Gate to Source Voltage
V_DS = 0
10
1.0
0.1
0
–10 –20 –30 –40 –50
Gate to Source Voltage V_GS (V)
Reverse Transfer Capacitance
vs. Drain to Source Voltage
100
f = 1 MHz
50
V_GS = 0
20
10
5
2
1
0.1 0.2
0.5 1.0 2
5 10
Drain to Source Voltage V_DS (V)
12
10
8
6
4
2
0
10
Noise Figure vs. Frequency
V_DS = 5 V
I_D = 1 mA
Rg = 1 kΩ
100
1k
10 k
Frequency f (Hz)
100 k
Rev.2.00, Mar.14.2005, page 3 of 4