2SJ545 Datasheet, PDF (3/8 Pages) Hitachi Semiconductor – Silicon P Channel MOS FET High Speed Power Switching

2SJ545
Main Characteristics
Power vs. Temperature Derating
40
30
20
10
0
0
50
100
150
200
Case Temperature Tc (°C)
Typical Output Characteristics
–10
–10 V
Pulse Test
–5 V
–8
–4 V
–3.5 V
–6
–3 V
–4
–2
–2.5 V
V_GS = –2 V
0
0
–2 –4 –6 –8 –10
Drain to Source Voltage V_DS (V)
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
–1.0
Pulse Test
–0.8
–0.6
I_D = –5 A
–0.4
–2 A
–0.2
–1 A
0
0
–4
–8 –12 –16 –20
Gate to Source Voltage V_GS (V)
Rev.4.00 Jun 05, 2006 page 3 of 7
Maximum Safe Operation Area
–100
10 µs
–30
–10
–3
–1
–0.3
PW
=
10
1
100
ms
µ_s
ms _{(1 shot)}
Operation in
this area is
limited by R_{DS (on)}
Ta = 25°C
–0.1
–0.1 –0.3 –1 –3 –10 –30 –100
Drain to Source Voltage V_DS (V)
Typical Transfer Characteristics
–10
V_DS = –10 V
Pulse Test
–8
–6
–4
–2
Tc = 75°C
25°C
–25°C
0
0
–1 –2 –3 –4 –5
Gate to Source Voltage V_GS (V)
Static Drain to Source on State Resistance
vs. Drain Current
1
Pulse Test
0.5
0.2
0.1
0.05
V_GS = –4 V
–10 V
0.02
0.01
–0.1 –0.3 –1 –3 –10 –30 –100
Drain Current I_D (A)