2SD1470 Datasheet, PDF (3/6 Pages) Hitachi Semiconductor – Silicon NPN Epitaxial, Darlington

2SD1470
Main Characteristics
Maximum Collector Dissipation Curve
1.2
0.8
0.4
0
50
100
150
Ambient Temperature Ta (°C)
Typical Output Characteristics
0.5
Ta = 25°C
0.4
11124680
12
10
8
0.3
6
0.2
4
2 µA
0.1
I_B = 0
0
1
2
3
4
5
Collectot to Emitter Voltage V_CE (V)
Saturation Voltage vs.
Collector Curret
10
3
V_BE(sat)
1.0
V_CE(sat)
0.3
0.1
10
Ta = 25°C
I_C/I_B = 1,000
30
100 300 1,000
Collector Current I_C (mA)
Rev.2.00 Aug 10, 2005 page 3 of 5
Area of Safe Operation
10
3
i_C(peak)
1.0
0.3
Ta = 25°C
0.1 ^{1Shot Pulse}
0.03
0.01
3
10
30
100 1,000
Collector to Emitter Voltage V_CE (V)
DC Current Transfer Ratio vs.
Collector Current
300
100
Ta = 75°C
25
–25
30
V_CE = 3 V
Pulse
10
3
10
30
100 300 1,000
Collector Current I_C (mA)