2SD1135 Datasheet, PDF (3/6 Pages) Hitachi Semiconductor – Silicon NPN Triple Diffused

2SD1135
Silicon NPN Triple Diffused
Application
Low frequency power amplifier complementary pair with 2SB859
Outline
TO-220AB
ADE-208-906 (Z)
1st. Edition
September 2000
1
23
1. Base
2. Collector
(Flange)
3. Emitter
Absolute Maximum Ratings (Ta = 25°C)
Item
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Collector peak current
Collector power dissipation
Junction temperature
Storage temperature
Note: 1. Value at T_C = 25°C.
Symbol
V_CBO
V_CEO
V_EBO
I_C
I _C(peak)
P_C * ¹
Tj
Tstg
Ratings
Unit
100
V
80
V
5
V
4
A
8
A
40
W
150
°C
–45 to +150
°C