2SC4308 Datasheet, PDF (3/6 Pages) Hitachi Semiconductor – Silicon NPN Epitaxial Planar

2SC4308
Main Characteristics
Maximum Collector Dissipation Curve
600
400
200
0
50
100
150
Ambient Temperature Ta (°C)
1,000
DC Current Transfer Ratio vs.
Collector Current
V_CE = 5 V
Pulse Test
Ta = 75°C
100
25
–25
10
1
10
100
1,000
Collector Current I_C (mA)
Collector to Emitter Saturation
Voltage vs. Collector Current
1.0
Ta = 75°C
25
0.1
–25
I_C = 10 I_B
Pulse Test
0.01
1
10
100
1,000
Collector Current I_C (mA)
Rev.2.00 Aug 10, 2005 page 3 of 5
Typical Output Characteristics
200
4.0 3.5 ^3.0
2.5
2.0
1.5
100
0.1
0.5mA
I_B = 0
0
1.0
2.0
Collector to Emitter Voltage V_CE (V)
Base to Emitter Voltage vs.
Collector Current
10
V_CE = 5 V
Pulse Test
Ta = –25°C
1.0
25
75
0.1
1
10
100
1,000
Collector Current I_C (mA)
10,000
Gain Bandwidth Product vs.
Collector Current
V_CE = 5 V
1,000
100
1
10
100
1,000
Collector Current I_C (mA)