2SC3512 Datasheet, PDF (3/6 Pages) Hitachi Semiconductor – Silicon NPN Epitaxial

2SC3512
Main Characteristics
Maximum Collector Dissipation Curve
1,000
800
600
400
200
0
50
100
150
Ambient Temperature Ta (°C)
DC Current Transfer Ratio vs.
Collector Current
200
Pulse
V_CE = 5 V
160
120
80
40
0
1
2
5 10 20
50
Collector Current I_C (mA)
Collector Output Capacitance vs.
Collector to Base Voltage
2.0
I_E = 0
f = 1 MHz
1.6
1.2
0.8
0.4
0
1
2
5 10 20
50
Collector to Base Voltage V_CB (V)
Rev.3.00 Apr 20, 2006 page 3 of 5
Typical Output Characteristics
20
180
160
16
140
120
12
100
80
8
60
40
4
I_B = 20 µA
0
2
4
6
8 10
Collector to Emitter Voltage V_CE (V)
Gain Bandwidth Product vs.
Collector Current
10
V_CE = 5 V
8
6
4
2
0
1
2 5 10 20
50
Collector Current I_C (mA)
Power Gain vs. Collector Current
20
V_CE = 5 V
f = 900 MHz
16
12
8
4
0
1
2
5 10 20
50
Collector Current I_C (mA)