U18680EJ1V0PM00_15 Datasheet, PDF (24/30 Pages) Renesas Technology Corp – 8-BIT SINGLE-CHIP MICROCONTROLLER

µPD78F9221CS, 78F9222CS
Flash Memory Programming Characteristics (TA = –40 to +85°C, 2.7 V ≤ VDD ≤ 5.5 V, VSS = 0 V)
Parameter
Symbol
Conditions
MIN. TYP. MAX.
Supply current
Erasure count^{Note 1}
(per 1 block)
IDD
NERASE
VDD = 5.5 V
TA = −40 to +85°C
7.0
1000
Chip erase time
Block erase time
Byte write time
Internal verify
Blank check
Retention years
TCERASE TA = −10 to +85°C,
NERASE ≤ 100
4.5 V ≤ VDD ≤ 5.5 V
3.5 V ≤ VDD < 4.5 V
2.7 V ≤ VDD < 3.5 V
TA = −10 to +85°C,
NERASE ≤ 1000
4.5 V ≤ VDD ≤ 5.5 V
3.5 V ≤ VDD < 4.5 V
2.7 V ≤ VDD < 3.5 V
TA = −40 to +85°C,
NERASE ≤ 100
4.5 V ≤ VDD ≤ 5.5 V
3.5 V ≤ VDD < 4.5 V
2.7 V ≤ VDD < 3.5 V
TA = −40 to +85°C,
NERASE ≤ 1000
4.5 V ≤ VDD ≤ 5.5 V
3.5 V ≤ VDD < 4.5 V
2.7 V ≤ VDD < 3.5 V
TBERASE
TA = −10 to +85°C,
NERASE ≤ 100
4.5 V ≤ VDD ≤ 5.5 V
3.5 V ≤ VDD < 4.5 V
2.7 V ≤ VDD < 3.5 V
TA = −10 to +85°C,
NERASE ≤ 1000
4.5 V ≤ VDD ≤ 5.5 V
3.5 V ≤ VDD < 4.5 V
2.7 V ≤ VDD < 3.5 V
TA = −40 to +85°C,
NERASE ≤ 100
4.5 V ≤ VDD ≤ 5.5 V
3.5 V ≤ VDD < 4.5 V
2.7 V ≤ VDD < 3.5 V
TA = −40 to +85°C,
NERASE ≤ 1000
4.5 V ≤ VDD ≤ 5.5 V
3.5 V ≤ VDD < 4.5 V
2.7 V ≤ VDD < 3.5 V
TWRITE TA = −40 to +85°C, NERASE ≤ 1000
TVERIFY Per 1 block
Per 1 byte
TBLKCHK Per 1 block
TA = 85°C^{Note 2}, NERASE ≤ 1000
10
0.8
1.0
1.2
4.8
5.2
6.1
1.6
1.8
2.0
9.1
10.1
12.3
0.4
0.5
0.6
2.6
2.8
3.3
0.9
1.0
1.1
4.9
5.4
6.6
150
6.8
27
480
Unit
mA
Times
s
s
s
s
s
s
s
s
s
s
s
s
s
s
s
s
s
s
s
s
s
s
s
s
µs
ms
µs
µs
Years
Notes 1. Depending on the erasure count (NERASE), the erase time varies. Refer to the chip erase time and block
erase time parameters.
2. When the average temperature when operating and not operating is 85°C.
Remark When a product is first written after shipment, “erase → write” and “write only” are both taken as one rewrite.
22
Preliminary Product Information U18680EJ1V0PM00