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R1Q4A7236ABB Datasheet, PDF (24/36 Pages) Renesas Technology Corp – 72-Mbit DDRII SRAM 2-word Burst | |||
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Common
R1Q4A7236ABB / R1Q4A7218ABB Series
TAP DC Operating Characteristics
(Ta = 0 ~ +70°C @ R1Q*A*****BB-**R** series)
(Ta = -40 ~ +85°C @ R1Q*A*****BB-**I** series)
(VDD = 1.8V ±0.1V)
Parameter
Symbol Min Typ
Max Unit
Notes
Input high voltage
Input low voltage
Input leakage current
Output leakage current
VIH
+1.3
⯠VDD + 0.3 V
VIL
â0.3
â¯
+0.5
V
ILI
â5.0 â¯
+5.0
μA 0 V ⤠VIN ⤠VDD
ILO
â5.0
â¯
+5.0
μA
0 V ⤠VIN ⤠VDD,
output disabled
Output low voltage
Output high voltage
Notes:
VOL1
â¯
â¯
0.2
V
IOLC = 100 μA
VOL2
â¯
â¯
0.4
V
IOLT = 2 mA
VOH1
1.6
â¯
â¯
V |IOHC| = 100 μA
VOH2
1.4
â¯
â¯
V
|IOHT| = 2 mA
1. All voltages referenced to VSS (GND).
2. At power-up, VDD and VDDQ are assumed to be a linear ramp from 0V to VDD(min.) or
VDDQ(min.) within 200ms. During this time VDDQ < VDD and VIH < VDDQ.
During normal operation, VDDQ must not exceed VDD.
Rev. 0.11 : 2013.01.15
R10DS0166EJ0011
PAGE:24
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