R1Q3A7236ABG Datasheet, PDF (24/36 Pages) Renesas Technology Corp – 72-Mbit QDR II SRAM 4-word Burst

Common
R1Q3A7236ABG / R1Q3A7218ABG Series
TAP DC Operating Characteristics
(Ta = 0 ~ +70°C @ R1Q*A*****BG-**R** series)
(Ta = -40 ~ +85°C @ R1Q*A*****BG-**I** series)
(V_DD = 1.8V ±0.1V)
Parameter
Symbol Min Typ
Max Unit
Notes
Input high voltage
Input low voltage
Input leakage current
Output leakage current
V_IH
+1.3
⎯ V_DD + 0.3 V
V_IL
−0.3
⎯
+0.5
V
I_LI
−5.0 ⎯
+5.0
μA 0 V ≤ V_IN ≤ V_DD
I_LO
−5.0
⎯
+5.0
μA
0 V ≤ V_IN ≤ V_DD,
output disabled
Output low voltage
Output high voltage
Notes:
V_OL1
⎯
⎯
0.2
V
I_OLC = 100 μA
V_OL2
⎯
⎯
0.4
V
I_OLT = 2 mA
V_OH1
1.6
⎯
⎯
V |I_OHC| = 100 μA
V_OH2
1.4
⎯
⎯
V
|I_OHT| = 2 mA
1. All voltages referenced to V_SS (GND).
2. At power-up, V_DD and V_DDQ are assumed to be a linear ramp from 0V to V_DD(min.) or
V_DDQ(min.) within 200ms. During this time V_DDQ < V_DD and V_IH < V_DDQ.
During normal operation, V_DDQ must not exceed V_DD.
Rev. 0.11 : 2013.01.15
R10DS0176EJ0011
PAGE:24