R8C-14 Datasheet, PDF (22/40 Pages) Renesas Technology Corp – SINGLE-CHIP 16-BIT CMOS MICROCOMPUTER

R8C/14 Group, R8C/15 Group
5. Electrical Characteristics
Table 5.5 Flash Memory (Data flash Block A, Block B) Electrical Characteristics
Symbol
−
−
−
−
−
td(SR-ES)
−
−
−
−
−
Parameter
Program/Erase Endurance⁽²⁾
Byte Program Time
(Program/Erase Endurance ≤ 1,000 Times)
Byte Program Time
(Program/Erase Endurance > 1,000 Times)
Block Erase Time
(Program/Erase Endurance ≤ 1,000 Times)
Block Erase Time
(Program/Erase Endurance > 1,000 Times)
Time Delay from Suspend Request until
Erase Suspend
Erase Suspend Request Interval
Program, Erase Voltage
Read Voltage
Program, Erase Temperature
Data Hold Time⁽⁹⁾
Conditions
VCC = 5.0 V at Topr = 25 °C
Standard
Min.
Typ.
10,000⁽³⁾
−
−
50
VCC = 5.0 V at Topr = 25 °C
−
65
VCC = 5.0 V at Topr = 25 °C
−
0.2
VCC = 5.0 V at Topr = 25 °C
−
0.3
−
−
10
−
2.7
−
2.7
−
-20⁽⁸⁾
−
Ambient temperature = 55 °C
20
−
Max.
−
400
−
9
−
8
−
5.5
5.5
85
−
Unit
times
µs
µs
s
s
ms
ms
V
V
°C
year
NOTES:
1. VCC = AVcc = 2.7 to 5.5V at Topr = −20 to 85 °C / −40 to 85 °C, unless otherwise specified.
2. Definition of program and erase
The program and erase endurance shows an erase endurance for every block.
If the program and erase endurance is “n” times (n = 100, 10000), “n” times erase can be performed for every block.
For example, if performing 1-byte write to the distinct addresses on Block A of 1Kbyte block 1,024 times and then erasing that
block, program and erase endurance is counted as one time.
However, do not perform multiple programs to the same address for one time ease.(disable overwriting).
3. Endurace to guarantee all electrical characteristics after program and erase.(1 to “Min.” value can be guaranateed).
4. Standard of Block A and Block B when program and erase endurance exceeds 1,000 times. Byte program time to 1,000
times aer the same as that in program area.
5. In the case of a system to execute multiple programs, perform one erase after programming as reducing effective reprogram
endurance not to leave blank area as possible such as programming write addresses in turn . If programming a set of 16
bytes, programming up to 128 sets and then erasing them one time can reduce effective reprogram endurance. Additionally,
averaging erase endurance for Block A and B can reduce effective reprogram endurance more. To leave erase endurance for
every block as information and determine the restricted endurance are recommended.
6. If error occurs during block erase, attempt to execute the clear status register command, then the block erase command at
least three times until the erase error does not occur.
7. Customers desiring Program/Erase failure rate information should contact their Renesas technical support representative.
8. -40 °C for D version.
9. The data hold time incudes time that the power supply is off or the clock is not supplied.
Rev.2.00 Jan 30, 2006 Page 22 of 37
REJ03B0102-0200