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UPA2631T1R Datasheet, PDF (2/7 Pages) Renesas Technology Corp – P-CHANNEL MOSFET -20 V, -8.0 A, 32 m | |||
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μPA2631T1R
Electrical Characteristics (TA = 25°C)
Characteristics
Zero Gate Voltage Drain Current
Gate Leakage Current
Gate Cut-off Voltage
Forward Transfer Admittance â1
Drain to Source On-state
Resistance â1
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Total Gate Charge
Gate to Source Charge
Gate to Drain Charge
Body Diode Forward Voltage â1
Note: â1. Pulsed
Symbol
IDSS
IGSS
VGS(off)
| yfs |
RDS(on)1
RDS(on)2
RDS(on)3
Ciss
Coss
Crss
td (on)
tr
td (off)
tf
QG
QGS
QGD
VF(SâD)
MIN.
â0.4
8.0
TYP.
23.7
29.0
37.9
1240
238
184
9.5
5.5
89
76
12.5
1.7
4.0
MAX.
â1.0
m10
â1.1
32
41
62
1.5
Unit
μA
μA
V
S
mΩ
mΩ
mΩ
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
Test Conditions
VDS = â20 V, VGS = 0 V
VGS = m8 V, VDS = 0 V
VDS = â10 V, ID = â1 mA
VDS = â5 V, ID = â3.0 A
VGS = â4.5 V, ID = â3.0 A
VGS = â2.5 V, ID = â3.0 A
VGS = â1.8 V, ID = â3.0 A
VDS = â10 V, VGS = 0 V,
f = 1.0 MHz
ID = â3.0 A, VDD = â10.0 V,
VGS = â4.0 V, RG = 6 Ω
ID = â6.0 A , VDD = â16 V,
VGS = â4.5 V
IF = 6.0 A, VGS = 0 V
TEST CIRCUIT 1 SWITCHING TIME
TEST CIRCUIT 2 GATE CHARGE
D.U.T.
RG
PG.
VGS(â)
0
Ï
Ï = 1 μs
Duty Cycle ⤠1%
RL
VDD
VGS(â)
VGS
Wave Form
0 10%
VDS(â)
90%
VDS
VDS
Wave Form 0
td(on)
VGS
90%
90%
10% 10%
tr td(off)
tf
ton
toff
D.U.T.
IG = â2 mA
RL
PG.
50 Ω
VDD
R07DS0991EJ0100 Rev.1.00
Dec 27, 2012
Page 2 of 6
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