RQK2001HQDQA Datasheet, PDF (2/8 Pages) Renesas Technology Corp – Silicon N Channel MOS FET Power Switching

RQK2001HQDQA
Electrical Characteristics
(Ta = 25°C)
Item
Symbol Min
Typ
Max
Unit
Test conditions
Drain to source breakdown voltage V_(BR)DSS 200
—
—
V
I_D = 10 mA, V_GS = 0
Gate to source leak current
I_GSS
—
—
+0.1
µA
V_GS = +30 V, V_DS = 0
Gate to source leak current
I_GSS
—
—
–0.1
µA
V_GS = –30 V, V_DS = 0
Zero gate voltage drain current
I_DSS
—
—
1
µA
V_DS = 200 V, V_GS = 0
Gate to source cutoff voltage
V_GS(off)
3
—
4.5
Drain to source on state resistance
R_DS(on)
—
5.0
6.7
Forward transfer admittance
|y_fs|
0.2
0.3
—
V
V_DS = 10 V, I_D = 1 mA
Ω
I_D = 0.15 A, V_GS =10 V ^Note3
S
I_D = 0.15 A, V_DS = 10 V ^Note3
Input capacitance
Ciss
—
30
—
pF
V_DS = 25 V
Output capacitance
Coss
—
5
—
pF
V_GS = 0
Reverse transfer capacitance
Crss
—
2
—
pF ^{f = 1 MHz}
Turn - on delay time
Rise time
Turn - off delay time
Fall time
t_d(on)
—
13
—
ns I_D = 0.15 A
t_r
—
12
—
ns
V_GS = 10 V
t_d(off)
—
42
—
ns
R_L = 667 Ω
t_f
—
38
—
ns
Rg = 50 Ω
Total gate charge
Gate to Source charge
Gate to drain charge
Qg
—
1.8
—
nC V_DD = 100 V
Qgs
—
0.4
—
nC ^VGS ^{= 10 V}
Qgd
—
0.9
—
nC ^{ID = 0.4 A}
Body - drain diode forward voltage
V_DF
—
0.8
1.2
V
I_F = 0.4 A, V_GS = 0 ^Note3
Notes: 3. Pulse test
REJ03G1731-0100 Rev.1.00 Sep 01, 2008
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