RQJ0304DQDQA_15 Datasheet, PDF (2/9 Pages) Renesas Technology Corp – Silicon P Channel MOS FET Power Switching

RQJ0304DQDQA
Preliminary
Electrical Characteristics
Item
Drain to source breakdown voltage
Gate to source breakdown voltage
Gate to source breakdown voltage
Gate to source leak current
Gate to source leak current
Drain to source leak current
Gate to source cutoff voltage
Drain to source on state resistance
Drain to source on state resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn - on delay time
Rise time
Turn - off delay time
Fall time
Total gate charge
Gate to Source charge
Gate to drain charge
Body - drain diode forward voltage
Notes: 3. Pulse test
Symbol
V_(BR)DSS
V_(BR)GSS
V_(BR)GSS
I_GSS
I_GSS
I_DSS
V_GS(off)
R_DS(on)
R_DS(on)
|y_fs|
Ciss
Coss
Crss
t_d(on)
t_r
t_d(off)
t_f
Qg
Qgs
Qgd
V_DF
Min
–30
+8
–12
—
—
—
–0.4
—
—
1.8
—
—
—
—
—
—
—
—
—
—
—
Typ
—
—
—
—
—
—
—
195
300
2.5
185
45
25
18
33
22
5
1.9
0.4
0.7
–0.9
Max
—
—
—
+10
–10
–1
–1.4
245
420
—
—
—
—
—
—
—
—
—
—
—
–1.3
Unit
V
V
V
μA
μA
μA
V
mΩ
mΩ
S
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
(Ta = 25°C)
Test conditions
I_D = –10 mA, V_GS = 0
I_G = +100 μA, V_DS = 0
I_G = –100 μA, V_DS = 0
V_GS = +6 V, V_DS = 0
V_GS = –10 V, V_DS = 0
V_DS = –30 V, V_GS = 0
V_DS = –10 V, I_D = -1 mA
I_D = –1.0 A, V_GS = –4.5 V ^Note3
I_D = –1.0 A, V_GS = –2.5 V ^Note3
I_D = –1.0 A, V_DS = –10 V ^Note3
V_DS = –10 V, V_GS = 0,
f = 1 MHz
I_D = –1.0 A
V_GS = –4.5 V
R_L = 10 Ω
R_g = 4.7 Ω
V_DD = –10 V
V_GS = –4.5 V
I_D = –2.0 A
I_F = –2.0 A, V_GS = 0 ^Note3
R07DS0296EJ0300 Rev.3.00
Jan 10, 2014
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