RKZ16TKG Datasheet, PDF (2/5 Pages) Renesas Technology Corp – Silicon Planar Zener Diode for Bi-directional Surge Absorption

RKZ16TKG
Absolute Maximum Ratings
Item
Power dissipation
Junction temperature
Storage temperature
Symbol
Pd
Tj
Tstg
Value
200
150
–55 to +150
Preliminary
(Ta = 25C)
Unit
mW
C
C
Electrical Characteristics
Item
Zener voltage
Reverse current
Capacitance
Symbol Min
Typ
Max
Unit
V_Z
14.5
—
17.5
V
I_R
—
—
0.1
A
C
—
—
30
pF
ESD-Capability *¹
—
30
—
—
kV
Note: 1. Failure criterion ; I_R > 0.1 A at V_R = 12 V. (Both direction)
(Ta = 25C)
Test Condition
I_Z = 1 mA, 40 ms pulse
V_R = 12 V
V_R = 0 V, f = 1 MHz
C = 150 pF, R = 330 , Both forward
and reverse direction 10 pulse
R07DS0152EJ0100 Rev.1.00
Sep 21, 2010
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