RJP3053DPP Datasheet, PDF (2/2 Pages) Renesas Technology Corp – Power MOSFETs and IGBT for PDP

April 2010
Renesas Electronics
Power MOSFETs for Backlight Inverter
Achieve Miniaturization and Higher Efficiency
Features
Low on resistance, High-speed switching
Low Qg, Low Qgd
Small package, Built-in 2 elements
Merits
High efficiency
Mniaturization
Example of Application Circuit (LCD TV, TFT Monitor, Note PC)
Full Bridge
Vin
Pch
HAT3029R(30V)
HAT3031R(60V)
Nch&Pch in 1PKG
Half Bridge
Vin
Pch
HAT3029R(30V)
HAT3031R(60V)
Nch&Pch in 1PKG
HRV103A
Nch
Push/Pull
Vin
Nch
Vds(peak)=Vin + V(surge)
HRV103A
Nch
Vds(peak)=Vin + V(surge)
Nch
HAT2215R(80V)
Dual Nch in 1PKG
Vds(peak)=2Vin + V(surge)
Product Lineup
No
Type No
1 HAT2199R
2 HAT2208R
3 HAT2256R
4 HAT1131R
5 HAT1132R
6 HAT2276R
7 HAT2280R
8 HAT2275R
9 HAT2215R
10 HAT1126R
11 HAT3029R
Single
Nch+Nch
Pch+Pch
12 HAT3037R
13 HAT3010R
14 HAT3031R
Nch+Pch
15 HAT3038R
16 HAT3021R
17 HAT3019R
Max.Ratings
VDSS VGss
ID
（^V)
（^V)
（^A)
30
±20
11
30
±20
9
60
±20
8
-30
±20
-9
-30
±20
-7
30
±20
7.5
30
±20
6
60
±20
6.6
80
±20
3.4
-60
±20
6
30
±20
6
-30 +10/-20 -6
45
±20
5
-45 +10/-20 -3.8
60
±20
6
-60
±20
-5
60
±20
6.6
-60 +10/-20 -3.4
60
±20
5
-60
±20
-3.8
80
±20
3.4
-80
±20
-2.6
100
±20
3.5
-100
±20
-2.3
©2010. Renesas Electronics Corporation, All rights reserved.
RDS(on) (mΩ)
VGS=4.5v(8v)
ｔｙｐ
max
17
25
24
35
28
41
21.5
31
27.5
40
VGS=10v
Qgd
ｔｙｐ
max
(nc)
13
16.5
1.8
18
23
1.1
24
30
3.2
15
19
5.8
20
25
5.2
27
40
19
24
1.2
40
58
27
34
1.1
29
43
25
32
3.2
100
145
88
115
1.3
60
85
40
50
8
40
58
27
34
1.1
36
53
25
32
4.4
55
75
44
55
0.9
95
130
75
95
1.5
32
45
25
32
8
90
130
60
76
8
29
43
25
32
2.8
120
175
95
120
2.2
55
80
48
60
1.4
90
130
80
100
2.8
100
145
90
115
1.3
200
290
165
210
2.4
120
160
90
115
3.2
300
500
240
300
3.1
Qg
（^nC)
7.5
4.4
10
17
11.5
4.6
3
10
7.3
37
3.1
11.5
3.0
4.9
18
18
10
6.0
-
-
7.3
16
15
16