RJM0603JSC_15 Datasheet, PDF (2/12 Pages) Renesas Technology Corp – Silicon N/P Channel Power MOS FET (6 in 1 Type) High Speed Power Switching

RJM0603JSC
Pin Arrangement
Preliminary
1
20
20
1
2
19
19
21
2
3
18
18
Common Header
3
4
17
17
4
5
16
16
22
5
6
15
15
Common Header
6
7
14
14
7
8
13
13
8
9
12
12
23
9
10
11
11
Common Header
10
(Top View)
No.
1
2
3, 18
4
5, 6, 15, 16
7
8, 13
9
10
11
12
14
17
19
20
21
22
23
MOS1
MOS1
MOS1, 6
MOS2
MOS2, 5
MOS2
MOS3, 4
MOS3
MOS3
MOS4
MOS4
MOS5
MOS5
MOS6
MOS6
MOS1, 6
MOS2, 5
MOS3, 4
Source
Gate
Drain
Source
Drain
Gate
Drain
Source
Gate
Source
Gate
Source
Gate
Source
Gate
Drain (Header)
Drain (Header)
Drain (Header)
(Bottom View)
MOS6
Pch
19
S
MOS5
Pch
14
S
MOS4
Pch
11
S
20
17
12
G
G
G
D 3,18,21
D 5,6,15,16,22
D 8,13,23
2
7
10
G
G
G
S
1
MOS1
Nch
S
4
MOS2
Nch
S
9
MOS3
Nch
Absolute Maximum Ratings
Item
Symbol
Drain to source voltage
V_DSS
Gate to source voltage
V_GSS
Drain current
Drain peak current
Channel dissipation
Avalanche current
Avalanche energy
Channel temperature
I_D
I_D (pulse) ^Note1
Pch ^Note2
I ^Note3
AP
E ^Note3
AR
Tch ^Note4
Storage temperature
Tstg
Notes: 1. PW  10s duty cycle  1%
2. 1 Drive Operation ; Value at Tc = 25C
3. Value at Tch = 25C, Rg  50 
4. AEC-Q101 compliant
Value
MOS1, 2, 3 (Nch) MOS4, 5, 6 (Pch)
60
–60
+20 / –5
–20 / +5
20
–20
80
–80
54
54
20
20
34
34
175
175
–55 to +150
–55 to +150
Thermal Impedance Characteristics
 Channel to case thermal impedance ch-c: 2.78C/W
(Ta = 25C)
Unit
V
V
A
A
W
A
mJ
C
C
R07DS0339EJ0501 Rev.5.01
Jul 22, 2011
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