RJK5026DPP-E0_12 Datasheet, PDF (2/7 Pages) Renesas Technology Corp – 500V - 6A - MOS FET High Speed Power Switching

RJK5026DPP-E0
Electrical Characteristics
Item
Symbol Min
Drain to source breakdown voltage
V_(BR)DSS
500
Zero gate voltage drain current
I_DSS
—
Gate to source leak current
I_GSS
—
Gate to source cutoff voltage
V_GS(off)
3.0
Static drain to source on state
resistance
R_DS(on)
—
Input capacitance
Ciss
—
Output capacitance
Coss
—
Reverse transfer capacitance
Crss
—
Turn-on delay time
t_d(on)
—
Rise time
t_r
—
Turn-off delay time
t_d(off)
—
Fall time
t_f
—
Total gate charge
Qg
—
Gate to source charge
Qgs
—
Gate to drain charge
Qgd
—
Body-drain diode forward voltage
V_DF
—
Body-drain diode reverse recovery time
t_rr
—
Notes: 5. Pulse test
Typ
—
—
—
—
1.35
440
52
7
26
19
50
14
14
2.5
6.9
0.95
230
Preliminary
Max
—
1
±0.1
4.5
1.70
Unit
V
A
A
V

(Ta = 25°C)
Test conditions
I_D = 10 mA, V_GS = 0
V_DS = 500 V, V_GS = 0
V_GS = 30 V, V_DS = 0
V_DS = 10 V, I_D = 1 mA
I_D = 3 A, V_GS = 10 V ^Note5
—
—
—
—
—
—
—
—
—
—
1.50
—
pF V_DS = 25 V
pF ^VGS ^{= 0}
pF ^{f = 1 MHz}
ns I_D = 3 A
ns ^VGS ^{= 10 V}
ns ^{RL = 83.3 }
ns ^{Rg = 10 }
nC V_DD = 400 V
nC ^VGS ^{= 10 V}
nC ^{ID = 6 A}
V I_F = 6 A, V_GS = 0 ^Note5
ns I_F = 6 A, V_GS = 0
di_F/dt = 100 A/s
R07DS0608EJ0100 Rev.1.00
Jun 21, 2012
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