|
RJK0358DSP Datasheet, PDF (2/7 Pages) Renesas Technology Corp – Silicon N Channel Power MOS FET Power Switching | |||
|
◁ |
RJK0358DPA
Electrical Characteristics
Item
Symbol Min
Drain to source breakdown voltage V(BR)DSS
30
Gate to source leak current
IGSS
â
Zero gate voltage drain current
IDSS
â
Gate to source cutoff voltage
VGS(off)
1.0
Static drain to source on state
RDS(on)
â
resistance
RDS(on)
â
Forward transfer admittance
|yfs|
â
Input capacitance
Ciss
â
Output capacitance
Coss
â
Reverse transfer capacitance
Crss
â
Total gate charge
Qg
â
Gate to source charge
Qgs
â
Gate to drain charge
Qgd
â
Turn-on delay time
td(on)
â
Rise time
tr
â
Turn-off delay time
td(off)
â
Fall time
tf
â
Bodyâdrain diode forward voltage
VDF
â
Bodyâdrain diode reverse recovery
trr
â
time
Notes: 4. Pulse test
Typ
â
â
â
â
2.6
3.8
50
4300
500
280
33
13
8
11
5.8
68
12
0.84
30
Max
â
± 0.1
1
2.5
3.4
5.4
â
â
â
â
â
â
â
â
â
â
â
1.10
â
Unit
V
µA
µA
V
mâ¦
mâ¦
S
pF
pF
pF
nC
nC
nC
ns
ns
ns
ns
V
ns
(Ta = 25°C)
Test Conditions
ID = 10 mA, VGS = 0
VGS = ±20 V, VDS = 0
VDS = 30 V, VGS = 0
VDS = 10 V, I D = 1 mA
ID = 19 A, VGS = 10 V Note4
ID = 19 A, VGS = 5 V Note4
ID = 19 A, VDS = 10 V Note4
VDS = 10 V
VGS = 0
f = 1 MHz
VDD = 10 V
VGS = 5 V
ID = 38 A
VGS = 10 V, ID = 19 A
VDD â
10 V
RL = 0.53 â¦
Rg = 4.7 â¦
IF = 38 A, VGS = 0 Note4
IF =38 A, VGS = 0
diF/ dt = 100 A/ µs
REJ03G1651-0400 Rev.4.00 Apr 10, 2008
Page 2 of 6
|
▷ |