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RJK0355DPA_13 Datasheet, PDF (2/7 Pages) Renesas Technology Corp – N Channel Power MOS FET High Speed Power Switching
RJK0355DPA
Electrical Characteristics
Item
Symbol Min
Drain to source breakdown voltage V(BR)DSS
30
Gate to source leak current
IGSS
—
Zero gate voltage drain current
IDSS
—
Gate to source cutoff voltage
VGS(off)
1.2
Static drain to source on state
RDS(on)
—
resistance
RDS(on)
—
Forward transfer admittance
|yfs|
—
Input capacitance
Ciss
—
Output capacitance
Coss
—
Reverse transfer capacitance
Crss
—
Gate Resistance
Rg
—
Total gate charge
Qg
—
Gate to source charge
Qgs
—
Gate to drain charge
Qgd
—
Turn-on delay time
td(on)
—
Rise time
tr
—
Turn-off delay time
td(off)
—
Fall time
tf
—
Body–drain diode forward voltage
VDF
—
Body–drain diode reverse recovery
trr
—
time
Notes: 4. Pulse test
Preliminary
Typ
—
—
—
—
8.2
11.8
55
860
165
53
4.2
6.3
2.3
1.4
6.9
4.1
40.8
5.6
0.87
20
Max
—
± 0.1
1
2.5
10.7
16.5
—
—
—
—
—
—
—
—
—
—
—
—
1.14
—
Unit
V
A
A
V
m
m
S
pF
pF
pF

nC
nC
nC
ns
ns
ns
ns
V
ns
(Ta = 25°C)
Test Conditions
ID = 10 mA, VGS = 0
VGS = ±20 V, VDS = 0
VDS = 30 V, VGS = 0
VDS = 10 V, I D = 1 mA
ID = 15 A, VGS = 10 V Note4
ID = 15 A, VGS = 4.5 V Note4
ID = 15 A, VDS = 10 V Note4
VDS = 10 V
VGS = 0
f = 1 MHz
VDD = 10 V
VGS = 4.5 V
ID = 30 A
VGS = 10 V, ID = 15 A
VDD  10 V
RL = 0.66 
Rg = 4.7 
IF = 30 A, VGS = 0 Note4
IF =30 A, VGS = 0
diF/ dt = 100 A/ s
R07DS0916EJ0700 Rev.7.00
Mar 19, 2013
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