RJK0351DPA_13 Datasheet, PDF(2/7 Page) Renesas Technology Corp – N Channel Power MOS FET High Speed Power Switching

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RJK0351DPA_13 Datasheet, PDF (2/7 Pages) Renesas Technology Corp – N Channel Power MOS FET High Speed Power Switching

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RJK0351DPA

Electrical Characteristics

Item

Symbol Min

Drain to source breakdown voltage V(BR)DSS

Gate to source leak current

IGSS

Zero gate voltage drain current

IDSS

Gate to source cutoff voltage

VGS(off)

1.2

Static drain to source on state

RDS(on)

resistance

RDS(on)

Forward transfer admittance

|yfs|

Input capacitance

Ciss

Output capacitance

Coss

Reverse transfer capacitance

Crss

Gate Resistance

Total gate charge

Gate to source charge

Qgs

Gate to drain charge

Qgd

Turn-on delay time

td(on)

Rise time

Turn-off delay time

td(off)

Fall time

Bodyâdrain diode forward voltage

VDF

Bodyâdrain diode reverse recovery

trr

time

Notes: 4. Pulse test

Typ

3.2

4.3

2560

470

180

2.4

6.3

3.7

8.6

5.0

6.4

0.82

Max

ï±0.1

2.5

4.2

6.0

1.07

Preliminary

Unit

ïA

mï

(Ta = 25Â°C)

Test Conditions

ID = 10 mA, VGS = 0

VGS = ï±20 V, VDS = 0

VDS = 30 V, VGS = 0

VDS = 10 V, ID = 1 mA

ID = 20 A, VGS = 10 V Note4

ID = 20 A, VGS = 4.5 V Note4

ID = 20 A, VDS = 10 V Note4

VDS = 10 V, VGS = 0,

f = 1 MHz

VDD = 10 V, VGS = 4.5 V,

ID = 40 A

VGS = 10 V, ID = 20 A,

VDD ï 10 V, RL = 0.57 ï,

Rg = 4.7 ï

IF = 40 A, VGS = 0 Note4

IF = 40 A, VGS = 0

diF/ dt = 100 A/ ïs

R07DS0914EJ0400 Rev.4.00

Mar 19, 2013

Page 2 of 6

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